A technical paper titled “CFET Beyond 3 nm: SRAM Reliability under Design-Time and Run-Time Variability” was published by researchers at TU Munich and IIT Kanpur. Find the technical paper here. May ...
A research team has developed an n-channel diamond MOSFET (metal-oxide-semiconductor field-effect transistor). The developed n-channel diamond MOSFET provides a key step toward CMOS (complementary ...
—The development of a process flow capable of demonstrating functionality of a monolithic complementary FET (CFET) transistor architecture is complex due to the need to vertically separate nMOS and ...
Field-effect transistors (FETs) are the cornerstone of modern electronic devices, providing the essential functionality for digital logic, analog processing and power management. The fundamental ...
A technical paper titled “Buried power rail to suppress substrate leakage in complementary field effect transistor (CFET)” was published by researchers at Korea University and Sungkyunkwan University.
The Nature Index 2025 Research Leaders — previously known as Annual Tables — reveal the leading institutions and countries/territories in the natural and health sciences, according to their output in ...
Continuing their joint process technology development that has been happening since 1998, Tokyo-based electronics giant Panasonic Corp and semiconductor company Renesas Technology Corp reported today ...
The formula for a perovskite compound is typically expressed as ABX3. These are crystalline structures that bond two cations ("A" and "B", divalent metal ion) to an anion ("X"); the "B" atoms tend to ...
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