Power Integrations has announced industry’s first 1,700V GaN transistor – as far as the company can tell. It is integrated ...

Infineon Technologies AG has launched a new family of high-voltage discretes, the CoolGaN Transistors 650V G5, further strengthening its GaN portfolio. This new product family's target applications ...

The high-voltage transistors are designed for diverse applications, enhancing power efficiency & reducing energy loss across multiple technologies.

Power Integrations has introduced a 1700 V gallium nitride (GaN) switch, the 1700 V InnoMux-2. marking a new technical ...

GaN now represents one of the fastest-growing segments of the semiconductor industry, with compound annual growth estimates ...

Infineon Technologies has introduced a new family of high-voltage discretes, the CoolGaN Transistors 650 V G5, further ...

Power Integrations has introduced a new member of its InnoMux-2 family of single-stage, independently regulated multi-output ...

With a breakdown voltage of 1700 V, Power Integrations’ IMX2353F GaN switcher easily supports a nominal input voltage of 1000 ...

Modern ultra-fast-transition transistors made from silicon carbide (SiC) and gallium nitride (GaN) would bring 10-fold reductions in power losses in power electronics. The chief concern about these ...

Recent enhancements to the classic Bipolar junction transistors show that the classic transistor has plenty of life left and ...

Power Integrations (NASDAQ: POWI), the leader in high-voltage integrated circuits for energy-efficient power conversion, today introduced a new member of its InnoMux™-2 family of single-stage ...

EPC Space, a leading provider of radiation hardened GaN-on-silicon transistors and ICs, announces the launch of HEMTKY product line.</p ...