MUNICH, June 18, 2026 /PRNewswire/ -- Innoscience today announced that the Munich Regional Court has just issued a pair of rulings, from which it could be confirmed that Innoscience's currently ...

MUNICH, June 19, 2026 /PRNewswire/ -- The District Court Munich, Germany (Landgericht München I) today ruled in favor of Infineon Technologies in two further of the patent infringement cases – ...

Law360 (July 8, 2024, 5:59 PM EDT) -- A judge at the U.S. International Trade Commission has found that Innoscience flouted federal law by importing semiconductor technology that infringes an ...

onsemi announced it has signed a memorandum of understanding with Innoscience to explore expanding production of gallium nitride (GaN) power devices using Innoscience’s proven 200mm GaN-on-silicon ...

Joint Development Agreement (JDA) on GaN technology to build the future in power electronics for AI datacenters, renewable energy generation and storage, cars and more Innoscience can make use of ...

STMicroelectronics NV (NYSE:STM) and Innoscience have formed a strategic partnership to develop and manufacture gallium nitride (GaN) technology, a key component for next-generation power electronics.

(RTTNews) - In the ongoing patent battle, Infineon Technologies AG (IFNNY) Wednesday said the U.S. International Trade Commission or ITC ruled in its favor in one patent infringement case against ...

INNOSCIENCE (02577.HK) opened 2.6% higher today (11th), hitting an intraday peak of HKD69.55. It last posted at HKD69.1, up 5.5%, with 4.5376 million shares traded, involving HKD31... Open a new ...

STMicroelectronics and Innoscience have signed a joint development agreement (JDA) to develop and manufacture gallium nitride on silicon (GaN-on-Si). Under the terms of the agreement, Innoscience will ...

(RTTNews) - onsemi and Innoscience on Tuesday announced the signing of a memorandum of understanding (MoU) to evaluate opportunities to accelerate the deployment of GaN power devices, starting with 40 ...