Japanese scientists have developed a spin-orbit torque magnetoresistive random-access memory (SOT-MRAM) device with the world’s lowest write power in a significant step toward energy-efficient, ...

“Spin-orbit-torque (SOT) devices are promising candidates for the future magnetic memory landscape, as they promise high endurance, low read disturbance, and low read error, in comparison with ...

Researchers have created a molecule that can store magnetic data at record-high temperatures, potentially reshaping how digital information is archived. The molecule, based on the rare earth element ...

(Nanowerk News) Researchers at the Paul Scherrer Institute PSI and ETH Zurich have developed a new material whose shape memory is activated by magnetism. It retains a given shape when it is put into a ...