An ultrathin ferroelectric capacitor, designed by researchers from Japan, demonstrates strong electric polarization despite ...

For semiconductor designers this outlines how a thin ferroelectric stack can retain polarization and support memory ...

Researchers in Japan have developed ultrathin ferroelectric capacitors that maintain strong polarization at a stack thickness ...

Researchers from the Institute of Science Tokyo and Canon ANELVA Corporation built an ultrathin ferroelectric memory ...

For decades, chipmakers have squeezed more computing power out of silicon by shrinking transistors, but that strategy is running into hard physical limits. A new approach from MIT aims to sidestep ...

Researchers demonstrate a new strategy for magnetization reversal in multiferroic materials, opening pathways to more energy-efficient electronics. (Nanowerk News) As the digital world demands greater ...

Researchers develop atom-thin material that cuts memory energy use tenfold, opening the door to ultra-efficient AI, mobile tech and data processing. (Nanowerk News) Memory units are essential ...

Universal memory promises to replace both RAM and flash storage in computers with a better, faster and more energy-efficient alternative — and researchers have just moved this one step closer to ...

For several decades, the semiconductor industry has been looking for alternative memory technologies to fill the gap between dynamic random-access memory (DRAM), the compute system’s main memory, and ...