An ultrathin ferroelectric capacitor, designed by researchers from Japan, demonstrates strong electric polarization despite ...
Ferroelectric capacitors can be made as thin as 30nm to add memory between the metallisation layers of ICs, according to ...
For semiconductor designers this outlines how a thin ferroelectric stack can retain polarization and support memory ...
Researchers from the Institute of Science Tokyo and Canon ANELVA Corporation built an ultrathin ferroelectric memory ...
Researchers in Japan have developed ultrathin ferroelectric capacitors that maintain strong polarization at a stack thickness ...
Researchers demonstrate a new strategy for magnetization reversal in multiferroic materials, opening pathways to more energy-efficient electronics. (Nanowerk News) As the digital world demands greater ...
Researchers develop atom-thin material that cuts memory energy use tenfold, opening the door to ultra-efficient AI, mobile tech and data processing. (Nanowerk News) Memory units are essential ...
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