Duke engineers show how a common device architecture used to test 2D transistors overstates their performance prospects in real-world devices.
High voltage nanosecond pulse generation using avalanche transistors represents a transformative avenue in the field of pulsed power technology. Exploiting the intrinsic properties of avalanche ...
STMicroelectronics has expanded its GaN‑based power device portfolio with the launch of MasterGaN6, the first device in the company’s second‑generation MasterGaN half‑bridge family. The new integrated ...
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