Terahertz transistor room temperature research reaches a new milestone: simulations of N-polar gallium nitride transistors ...
A Kyoto University and Phenitec Semiconductor team fabricated silicon carbide JFETs on a 6-inch wafer, achieving threshold-voltage standard deviation below 0.07 volts in the wafer center.
CHAMPAIGN, Ill. — A new type of transistor structure, invented by scientists at the University of Illinois at Urbana-Champaign, has broken the 600 gigahertz speed barrier. The goal of a terahertz ...
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Single 2D crystal transforms into transistor with built-in insulation and electrical contacts
A transistor normally requires several fundamentally different materials—a semiconductor to carry current, an insulating ...
Tokyo, Japan – Hailed as one of the greatest inventions of the 20 th century, transistors are integral components of modern electronics that amplify or switch electrical signals. As electronics become ...
A research team has implemented a novel method to achieve epitaxial growth of 1D metallic materials with a width of less than 1 nm. The group applied this process to develop a new structure for 2D ...
On the electromagnetic spectrum, which comprises everything from radio waves to X-rays and gamma rays, there exists a deadzone where conventional electronic devices can hardly operate. This deadzone ...
A University of Michigan-led team is developing a multiferroic M3BOLT device that uses magnetic and sound waves to represent ...
At the December 2021 IEDM conference (a conference for people who design advanced semiconductors), IBM announced it was turning transistors on their heads to keep Moore’s Law scaling alive. The new ...
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