Unlike other GAN artists, the project’s technical innovation lies in Ai-Da’s ability to manipulate paint on canvas. In the 1960s, computer art pioneers like Frieder Nake and Vera Molnár ...
Infineon Technologies AG has progressed in its development of what it claims is the first 300 mm gallium nitride (GaN) power ...
A selection from the art collection of French-Jewish producer ... not unlike the Monster public sculpture by Niki de Saint Phalle at Gan HaYuvel Jerusalem. BREATH IS explored in two exceptionally ...
By Jillian Steinhauer Tamara de Lempicka’s first major U.S. survey invokes her as a trailblazing techno-feminist who borrowed freely from art history. But it also buries her erratic second act.
Infineon has unveiled the world’s thinnest silicon power wafers, with a thickness of 20 micrometers and a diameter of 300 ...
31.75 x 45.72 in. (80.6 x 116.1 cm.) ...
Solid State Physics Laboratory, a DRDO laboratory, has successfully developed indigenous processes for growing and ...
Power Integrations has introduced a new member of its InnoMux-2 family of single-stage, independently regulated multi-output ...
Radu Barsan, vice president of technology at Power Integrations, said, "Our rapid pace of GaN development has delivered three world-first voltage ratings in less than two years: 900V, 1250V, and now ...
This project aims to create the world’s first GaN transistors and test data from wafers employing Atomera’s Mears Silicon Technologyâ„¢ (MST®). The effort will build upon improvements already ...
Mar fhinné a chleachtann Brian Maguire a shaothar, finné ar chogaidh, ar theithe imircigh, ar éagóracha an tsaoil ortha siúd ...