Magnetic memory techniques have emerged as a promising non‐destructive evaluation (NDE) approach to assess the stress state and detect early damage in ferromagnetic materials. By utilising the ...
As part of the Impulsing PAradigm Change through disruptive Technologies Program (ImPACT) (Program Manager: Masashi Sahashi) led by the Council for Science, Technology and Innovation of the Cabinet ...
Researchers have shown how to write any magnetic pattern desired onto nanowires, which could help computers mimic how the brain processes information. Researchers have shown how to write any magnetic ...
In a recently published article in IEEE Electron Devices Magazine the authors, I was one of them, looked at the impact of external magnetic fields on spin tunnel torque magnetic random-access memories ...
It is anticipated that within just a few decades, the surging volume of digital data will constitute one of the world's ...
The companies say MRAM, or magnetic random access memory, a leading candidate to replace flash memory in cell phones, could be ready for commercial production by 2005. Michael Kanellos is editor at ...
Scientists in Japan have developed a new kind of "universal" computing memory that is much faster and less energy-hungry than modules used in the best laptops and PCs today. Magnetoresistive Random ...