The high-voltage transistors are designed for diverse applications, enhancing power efficiency & reducing energy loss across ...

Power Integrations has announced industry’s first 1,700V GaN transistor – as far as the company can tell. It is integrated ...

Power Integrations has introduced a 1700 V gallium nitride (GaN) switch, the 1700 V InnoMux-2. marking a new technical ...

Infineon Technologies AG has launched a new family of high-voltage discretes, the CoolGaN Transistors 650V G5, further strengthening its GaN portfolio. This new product family's target applications ...

Infineon Technologies has introduced a new family of high-voltage discretes, the CoolGaN Transistors 650 V G5, further ...

Power Integrations has introduced a new member of its InnoMux-2 family of single-stage, independently regulated multi-output ...

Solid State Physics Laboratory (SSPL), a research arm of the Defence Research and Development Organisation (DRDO), has ...

and Infineon Technologies AG to produce a system with innovative bidirectional blocking GaN transistors. These transistors bring substantial benefits in terms of power density and efficiency and ...

With a breakdown voltage of 1700 V, Power Integrations’ IMX2353F GaN switcher easily supports a nominal input voltage of 1000 ...

Radu Barsan, vice president of technology at Power Integrations, said, "Our rapid pace of GaN development has delivered three world-first voltage ratings in less than two years: 900V, 1250V, and now ...

Power Integrations (NASDAQ: POWI), the leader in high-voltage integrated circuits for energy-efficient power conversion, today introduced a new member of its InnoMux™-2 family of single-stage ...

Power Integrations has introduced a new member of its InnoMux-2 family of single-stage, independently regulated multi-output offline power supply ICs. The new device features the industry’s first 1700 ...