Infineon Technologies AG has progressed in its development of what it claims is the first 300 mm gallium nitride (GaN) power ...

Solid State Physics Laboratory a DRDO laboratory has successfully developed indigenous processes for growing and manufacturing 4-inch diameter Silicon Carbide ...

Radu Barsan, vice president of technology at Power Integrations, said, "Our rapid pace of GaN development has delivered three world-first voltage ratings in less than two years: 900V, 1250V, and now ...

Power Integrations (NASDAQ: POWI), the leader in high-voltage integrated circuits for energy-efficient power conversion, today introduced a new member of its InnoMux™-2 family of single-stage, ...

Power Integrations has introduced a new member of its InnoMux-2 family of single-stage, independently regulated multi-output ...

With a jumbo 65-inch QLED 4K display, an anti-glare matte finish, and a razor-thin frame, Hisense’s flagship CanvasTV is the ...

Mar fhinné a chleachtann Brian Maguire a shaothar, finné ar chogaidh, ar theithe imircigh, ar éagóracha an tsaoil ortha siúd ...

Pontianaks in Taiwan' and 'The Top Percentile' were winners at the 2024 Taiwan Creative Content Fest pitching sessions, with ...

After announcing the world’s first 300-millimeter gallium nitride (GaN) power wafer and opening the world’s largest ...

Infineon has unveiled the world’s thinnest silicon power wafers, with a thickness of 20 micrometers and a diameter of 300 ...

"The world's thinnest silicon wafer is proof of our dedication to deliver outstanding customer value by pushing the technical boundaries of power semiconductor technology," said Jochen Hanebeck, CEO ...

For art lovers and the curious, the KL-based artist will offer insights ... It features the works of Anisa Abdullah, Fadilah ...