Abstract: A low-temperature annealing process for 4H-SiC/SiO2 stack in O2 ambient was found to annihilate the positive fixed charges induced by the interface nitridation process effectively, while ...
REO 99%min, La2O3 99.9%min, (CeO2+Pr6O11+Nd2O3+Sm2O3+Y2O3) 0.5%max, Fe2O3 0.005%max, SiO2 0.01%max, CaO 0.05%max, PbO 0.05%max, Cl- 0.03%max, Na2O 0.05%max, SO4 2- 0.05%max, Ignition Loss and Moisture ...
Article Views are the COUNTER-compliant sum of full text article downloads since November 2008 (both PDF and HTML) across all institutions and individuals. These metrics are regularly updated to ...
Surface Physics and Material Science Division, Saha Institute of Nuclear Physics, A CI of Homi Bhaba National Institute, 1/AF Bidhannagar, Kolkata 700064, India ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback